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    Archived pages: 14 . Archive date: 2012-11.

  • Title: LDP EUV Source: XTREME technologies GmbH
    Descriptive info: .. Market Segments.. Market Drivers.. The Rationale for LDP.. The LDP Technology.. XTREME History.. Corporate Profile.. The Business We Are In.. USHIO GROUP.. XTREME At A Glance.. Management.. Site Map.. Terms of Use.. Legal notice / Impressum.. October 18, 2012.. Announcement of Extreme Ultraviolet (EUV) Business from.. USHIO INC.. :.. At “2012 International Symposium on Extreme Ultraviolet Lithography” held in Brussels, Belgium from October 1 to October 4, 2012, Ushio made an announcement of stable operation of the EUV light source for the past half year at IMEC (Belgium), an international research institution, experimental results of high output power up to 74W, and verification of feasibility of 250W.. Based on such accomplishments, USHIO will continue promoting the business to achieve mass production of DPP (Discharge Produced Plasma) EUV light source.. June 25, 2012.. The state organization.. NRW.. INVEST.. honors each year the best investments of foreign companies in North Rhine-Westphalia.. This year XTREME technologies received  ...   manufacture such innovative products.. ".. (Dr.. Marc Corthout).. July 11, 2011.. IMEC announces printing of the first Extreme Ultra Violet (EUV)-light wafers with ASML NXE:3100 mounted with XTREME’s laser-assisted discharge plasma (LDP) source.. For details, visit.. Imec News.. February 28, 2011.. IMEC installs ASML’s pre-production EUV scanner NXE:3100 mounted with XTREME’s laser-assisted discharge plasma (LDP) source.. XTREME technologies GmbH develops, manufactures, markets and services EUV (Extreme Ultra-Violet) light sources for the semiconductor lithography market.. Together with our parent company USHIO INC.. , Tokyo, Japan, our goal is to extend Moore's Law by delivering powerful and reliable EUV light sources at 13.. 5 nm wavelength and thus paving the way for the semiconductor manufacturing of the coming decades.. XTREME's innovative solution - Laser-assisted Discharge Plasma (LDP) - combines the advantages of the traditional laser based and traditional discharge based technologies to generate EUV photons.. 2012 - XTREME technologies GmbH is a wholly owned subsidiary of USHIO INC..

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  • Title: Market Segments | XTREME
    Descriptive info: Home.. Markets Market Segments.. The current sources can be differentiated according to their respective level of maturity.. Beta Sources for the pre HVM (High Volume Manufacturing) market:.. There are two types of sources for the pre-HVM market:.. Pre-Beta sources refer to sources that have yet to demonstrate sufficient stability and high duty cycle operation.. Beta sources refer to sources that have demonstrated the required stability and high duty cycle operation, and are now ramping up to moderate power.. This is where XTREME’s LDP currently is.. Gamma Sources for the HVM (High Volume Manufacturing) market..  ...   mass manufacturing environment.. Feasibility.. α.. Source.. Pre.. β.. Source.. γ.. Process feasibility.. XTREME Source(ADT).. N.. A.. XTREME Source.. (NXE3100).. (NXE3300).. Process research.. Process development.. Pilot lin.. HVM line.. σ.. Adoption Year.. 2007.. 2010.. 2011.. 2012.. Target Market.. Process development.. HVM line.. Pilot line.. Currently Available Source.. XTREME's LDP.. XTREME's LDP.. Clean Power (W).. 10 w.. 100 w.. 100 w.. 250 W.. Out Of Band Rad.. (DUV IR).. NA.. Negligible.. Duty Cycle (%).. None.. 70 %.. 80 %.. 80 %.. Dose Stability (%).. 0.. 5 %.. 2 %.. TBD ( 0.. 2 %).. Page Top..

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  • Title: Market Drivers | XTREME
    Descriptive info: Markets Market Drivers.. Market Drivers.. What are the criteria that drive the development of an EUV light source?.. First and foremost: safety.. The manufacturing of semiconductor devices often makes use of, or generates as by-products, hazardous materials (toxic gases, strong acids, etc.. ).. While the equipment shall be operated only by persons having proper training and qualifications, by design the equipment should be inherently safe in all circumstances.. Safety encompasses:.. Safe installation/de-installation.. Safe operation.. Safe repair/maintenance.. Safety at end-of-life.. The second most critical factor is system integrity, or the ability to contain natural degradation or failure.. Although integrated, all active sub-systems — such as the EUV source — should be fully self-contained.. Contamination beyond the source/scanner interface (Intermediate Focus [IF]) would contaminate the optics of the scanner, reduce tool lifetime and even contaminate the reticles or wafers themselves.. XTREME’s LDP exhibits no contamination beyond the interface with the scanner [IF].. (EUVA/NEDO, SPIE Lithography 2011 San Jose, Poster 969-95).. Because XTREME’s source does not use laser light emitting in the infra-red region (CO2 laser) and the LDP laser beam is not in the direction of the EUV light, no IR is contained in the LDP source’s spectrum.. Furthermore, it has been demonstrated that XTREME’s LDP exhibits negligible parasitic Out-of-Band radiation (OOB) content beyond the IF.. (IMEC, SPIE Lithography 2011 San Jose, Poster 969-95).. To enable a consistent lithographic process —  ...   entrance of the scanner.. Current Spectral Purity Filtering (SPF) technology reduces the usable power delivered from the source to the scanner [power at IF] by more than 50%.. To achieve the same amount of Clean Power, XTREME’s LDP needs to generate only half the number of photons in comparison to LPP, thus consuming less energy.. EUV power alone, however, is insufficient to achieve highest throughput.. The source should be ready to fire when the scanner needs light: i.. , as soon as the scanner has stepped to the next exposure field.. Should the source Duty Cycle (the ratio of the burst duration to the time between the beginning of two bursts) be too low, the source would not be ready to fire when needed, thus requiring the scanner to wait and lowering effective throughput.. To enable maximal throughput, the duty cycle of the source should exceed the duty cycle required by the process.. The last, but not least, of the drivers is high uptime: i.. , the ability of the tool to operate for a long period without maintenance or failures.. High uptime is achieved through high reliability and the ability to readily maintain the equipment in the field.. Minimizing the length of time that equipment is unproductive minimizes the Cost of Downtime (COD) — namely, the cost of owning but not operating this equipment (a major component of COO)..

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  • Title: The Rationale for LDP | XTREME
    Descriptive info: technology The Rationale for LDP.. The Rationale for Laser-assisted Discharge Plasma (LDP) Technology.. EUV sources with high power performance have been under development for more than a decade.. Historically, the investigation focused primarily on two technologies: laser-produced plasmas (LPP) and discharge-produced plasmas (DPP).. In an LPP source, the plasma is generated by a focused laser pulse hitting an appropriate target material.. The target (mass-limited droplets emitted at a very high frequency) is designed to minimize the generation of debris.. The complexity of tracking, targeting and synchronizing the laser pulses with the tin droplets, however, makes LPP sources highly unstable in terms of pulse-to-pulse and dose stabilities.. Process-wise, the compounded dose instability resulting from such multiple instabilities eventually translates into poor CD uniformity, resulting in loss of yield.. Finally, because of its proximity to the plasma and exposure to a high dosage of ions, neutrals, electrons and debris, the collector mirror — the main mirror that collects EUV photons and focuses them towards the scanner — rapidly degrades, exhibiting a significant loss of reflectivity and far-field uniformity.. Despite efforts at mitigating degradation of the collector mirror, lifetimes for such very high precision multi-layer  ...   the primary components of COO in an LPP architecture.. In a DPP source, on the other hand, the plasma is generated within an electrode system by an electrical discharge in the gas phase (Xenon).. The scalability of this technology to higher repetition rates, however, seems limited by the decay of the plasma.. In addition, higher electrical input power leads to a higher thermal load on the electrodes, and cooling of the electrodes is limited by surface size.. However, DPP demonstrates high stability and achieves a high reliability.. Due to the inherent limitations of the traditional LPP and DPP technologies, since 2003 XTREME technologies has been engaged in developing a third alternative: Laser-assisted Discharge Plasma (LDP).. This hybrid technology combines the main advantages of the traditional LPP and DPP architectures: namely, power scalability and high stability.. Additional advantages of LDP are:.. Pure photons (i.. , no tin contamination beyond the scanner interface), thus guaranteeing a long scanner lifetime,.. Clean photons (i.. , negligible DUV and IR spectral content), enabling imaging and overlay,.. Dose stability and repeatability (enabling CD uniformity),.. High duty cycles (enabling high effective throughput), and.. Improved source uptime (enabling high-volume manufacturing)..

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  • Title: LDP Technology | XTREME
    Descriptive info: technology LDP Technology.. The Laser-assisted Discharge Plasma (LDP) Technology.. In the LDP architecture, liquid tin plays multiple roles.. Tin is:.. the fuel.. the electrode (the wheels are not; they are merely conductors).. a protector (protecting the rotating wheels from laser ablation).. a conductor (a liquid bath of tin).. a coolant.. In LDP, the plasma is generated between two rotating discs.. Partially immersed in baths filled with liquid tin, the discs are wetted and covered with a thin layer of liquid tin.. A pulsed laser beam focused one of the discs evaporates a small amount of tin, generating a tin cloud between the two discs.. Next, a capacitor bank (which is connected to the discs via the liquid tin) discharges and converts the  ...   an external cooler.. A grazing incidence mirror is used to focus the produced EUV light into the scanner.. Because the tin plasma generates tin debris, in the form of droplets, clusters, neutrals and ions, it is critical to protect the highly sensitive EUV optics.. XTREME technologies uses a foil-trap in combination with an inert buffer gas.. Due to collisions with the gas, the tin is redirected to the foils.. A very long collector lifetime (in excess of one year) has already been demonstrated, enabling high equipment uptime and a low Cost of Ownership.. To prevent tin contamination of the scanner, baffles are installed between the collector and the wall of the vacuum chamber.. No tin is found after the Intermediate Focus (IF)..

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  • Title: Company History | XTREME
    Descriptive info: Who Are We XTREME History.. 1997.. Fraunhofer ILT initiates research on EUV generation by electrical discharge.. 1999.. A first-generation source is completed and a proof-of-principle demonstrated by Fraunhofer ILT.. 2000.. Fraunhofer ILT proves high repetition rate operation is feasible with a second-generation source.. 2001.. Royal Philips and Fraunhofer ILT join to form Philips Extreme UV.. An automated third-generation source is built, soon followed by a fourth-generation source that introduces the triggering concept.. Jenoptik and Lambda Physik merge their efforts in EUV and establish XTREME technologies GmbH.. 2002.. Philips Extreme UV introduces the Xenon based alpha platform.. 2003.. XTREME technologies announces the XTS 13-35 for integration into the EUV Microstepper of Exitech.. Philips acquires the stakes of Fraunhofer ILT.. Philips files basic patents for LDP.. Philips and ASML decide that the Alpha Demo Tools will be powered by a tin discharge.. First  ...   on LPP and to focus on DPP.. XTREME technologies introduces the XTS 13 13-150 150-IF for integration in the EUV1 of Nikon.. Philips EUV demonstrates feasibility of collector life-time of one year.. XTREME technologies and Philips EUV announce to join forces.. 2008.. Ushio acquires full ownership of XTREME technologies with the purchase of Jenoptik shares.. Philips EUV and XTREME technologies demonstrate feasibility of LDP concept for HVM power levels.. 2009.. XTREME technologies and Philips EUV achieve first light with their first common light source.. ASML purchases this light source for integration in their NXE:3100 scanner.. The USHIO GROUP purchases the assets of Philips Extreme UV, then merges it with XTREME technologies.. Relocation of XTREME technologies to Aachen.. Official opening of the production facility in Alsdorf.. XTREME technologies introduces the first LDP light source ― integrated with ASML NXE:3100 ― for pilot/pre-production manufacturing..

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  • Title: The Business We Are In | XTREME
    Descriptive info: Who Are We Corporate Profile The Business We Are In.. Prior to 1997, the trend in optical lithography was simple:.. Between 1997 and 1999, the printed critical dimensions of semiconductor devices started to shrink beyond the printing capability of the traditional exposure tools, even despite the fact the semiconductor industry was introducing 248-nm laser-based DUV (Deep Ultra Violet) lithography in a late attempt to keep pace with Moore’s Law.. As the industry was further continuing along the historical trend, in order to pattern a thin line with a thick brush, the Industry needed to create “litho magic” … really a lot of “litho magic”.. Pushing the limit of ingenuity, chipmakers, exposure tool  ...   techniques used in optical photolithography at 193 nm are running out of steam and are becoming prohibitively expensive.. A new cost-effective, high-power EUV (extreme ultra-violet) light source is needed to enable high-volume manufacturing (HVM) of ever-shrinking semiconductor devices.. XTREME technologies GmbH and EUVA have jointly developed tin-based LDP (Laser-assisted Discharge Plasma) source systems for the integration of such sources into scanners.. Our goals are:.. to solve the wavelength gap — the growing gap between the printed critical dimensions (CD), driven by Moore’s Law, and the printing capability of lithographic exposure tools, constrained by the wavelength of the light source — and.. to enable the timely availability of EUV light sources for high-volume manufacturing..

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  • Title: Ushio Group Company | XTREME
    Descriptive info: Who Are We Corporate Profile USHIO GROUP.. XTREME technologies GmbH (“XTREME”) is a wholly owned subsidiary of the USHIO GROUP.. USHIO GROUP at a Glance:.. Company Name:.. Head Office:.. 2-6-1 Otemachi, Chiyoda-ku, Tokyo, Japan.. Tel: +81-3-3242-1811.. Fax: +81-3-3245-0589.. Established:.. March 1964.. Paid-In Capital:.. ¥19,556,326,316.. Group Companies:.. 12 (Japan), 34 (international).. Employees:.. 4700.. For more information about USHIO GROUP:.. USHIO - Corporate Data.. Through a series of acquisitions — ending with the purchase of Philips Extreme UV in 2010 — placed under the umbrella of XTREME technologies, the USHIO GROUP is now fully engaged in the development of light sources for EUV photolithography.. What initially started as a financial investment in a venture business has now grown into a full commitment to support the semiconductor industry.. The USHIO GROUP has enabled XTREME to grow beyond the boundary of the original  ...   worldwide.. Already the market leader in the segment of lamps used for optical lithography, over the recent years the USHIO GROUP has rejuvenated the market of DUV laser lithography through Gigaphoton, a 50/50 joint venture with the Komatsu Group.. In 2011, in consideration of the growing competitive situation between Gigaphoton and XTREME technologies, and acknowledging that the semiconductor industry needs options for EUV to become a reality, the USHIO GROUP agreed to sell its shares of Gigaphoton to the Komatsu Group in order to enable the separate development of both LPP technology (by Gigaphoton under the Komatsu Group) and LDP technology (by XTREME technologies under the USHIO GROUP).. As we are about to enter the new era of EUV lithography, the USHIO GROUP now stands poised to deliver the productivity gains the semiconductor industry needs to pursue Moore’s Law..

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  • Title: XTREME At A Glance | XTREME
    Descriptive info: Who Are We Corporate Profile XTREME At A Glance.. XTREME technologies at a Glance.. XTREME technologies GmbH.. wholly owned subsidiary of USHIO INC.. Steinbachstrasse 15, 52074 Aachen, Germany.. Tel: +49 (0) 241 8906 8029.. Fax: +49 (0) 2404 5527223.. Factory:.. Konrad-Zuse-Strasse 1, 52477 Alsdorf.. Tel: +49 (0) 2404 5527 223.. Established:.. 200.. Product:.. Laser-assisted Discharge Plasma (LDP) source for EUV photolithography.. Goals:.. Solve the Wavelength Gap.. Enable the timely availability of EUV light sources for high-volume manufacturing..

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  • Title: Board of Directors & Management | XTREME
    Descriptive info: Who Are We Management.. Tatsushi Igarashi.. Masaki Yoshioka.. Hiroshi Watanabe.. President and CEO.. President and CEO, XTREME technologies GmbH.. (August 2012 – Present).. Chairman and CEO, XTREME technologies GmbH.. (January 2012 – August 2012).. Corporate Executive Vice President, GM of EUV Div.. , USHIO Inc.. (2010 - 2011).. Corporate Executive Vice President, CTO, GM of R D and EUV Div.. (2009).. Corporate Executive Vice President, CTO and GM of R D of Lamp Company and GM of EUV Div.. (2007-2008).. Corporate Vice President, Executive Vice President and GM of R D of Lamp Company, USHIO Inc.. (2005 -2006).. Corporate Vice President, Executive Vice President and GM of Projector Lamp business Unit and R D of Lamp Company, USHIO Inc.. (2003- 2004).. Senior Director and GM, Development Div.. Gigaphoton Inc.. (2000- 2002).. Director of USHIO Research Inc.. (1996- 2000).. GM, R D Div.. USHIO Inc.. (1995).. Deputy GM, R D Div.. (1991-1994).. Senior engineer, Halogen Div.. (1989-1990).. Engineer ,R D Div.. (1980-1988).. Education.. Hokkaido University, California Institute of Technology ,Environmental Science (1979).. Muroran Institute of Technology, MA, Analytical Chemistry and Environmental Science (1977-1978).. Muroran Institute of Technology, BA, Material Science and Analytical Chemistry (1973-1976).. EVP Technology & CTO.. EVP, Executive Vice President,  ...   Osaka Prefecture University, BAS, Physical Chemistry (1979 – 1983).. EVP Finance & CFO.. EVP, Executive Vice President Finance, XTREME technologies GmbH (August 2008 – Present).. Deputy Director, Administration Division, USHIO Inc.. (May 2008-Aug 2008).. Senior Manager, Career Development Office, Human Resources Division, The Bank of Tokyo- Mitsubishi UFJ, Ltd.. (July 2005 - May 2008).. General Manager, Hamburg (Germany) Branch, The Bank of Tokyo - Mitsubishi UFJ, Ltd (January 2003 – July 2005).. General Manager, Kasugacho, The Bank of Tokyo- Mitsubishi UFJ, Ltd.. Branch (December 2000 - November 2002).. Deputy General Manager, Shin-Marunouchi Branch, The Bank of Tokyo - Mitsubishi UFJ, Ltd (March 1999-December 2000).. Senior Manager, Nagoya-Main Branch, The Bank of Tokyo - Mitsubishi UFJ, Ltd (October 1996-January 1999).. Manager, Corporate Banking Department No.. 2, The Bank of Tokyo- Mitsubishi UFJ, Ltd (October 1992-October 1996).. Manager, Hamburg Branch (Germany) , The Bank of Tokyo - Mitsubishi UFJ, Ltd ( September 1987-October 1992).. Assistant Manager, Shibuya Branch, The Bank of Tokyo - Mitsubishi UFJ, Ltd (March 1983-September 1987).. Osaka - Main Branch, The Bank of Tokyo - Mitsubishi UFJ, Ltd.. (April 1979-March 1983).. Keio University, Tokyo, Japan, B.. in Economics.. (April 1975-March 1979).. Chartered Member of the Security Analysts Association of Japan (CMA)..

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  • Title: Site Map | XTREME
    Descriptive info: Site Information Site Map.. HOME.. Markets.. Technology.. LDP Technology.. Who Are We.. Corporate Profile.. Site Information.. Site Map.. Contact Us..

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  • Archived pages: 14